The Valley Hall Effect in MoS2 Transistors

Valley Hall effect in disordered monolayer MoS2 from first principles

Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayer MoS2

We theoretically demonstrate that 100% valley-polarized transport in monolayers of MoS2 and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict...

Thickness-dependent mobility in two-dimensional MoS₂ transistors.

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attracted considerable attention due to its broken inversion symmetry, spin/valley coupling and the presence of a direct band gap, few-layer MoS2 r...

High-performance MoS2 transistors with low-resistance molybdenum contacts

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Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field- effect transistors

Articles you may be interested in Microscopic origin of low frequency noise in MoS2 field-effect transistors Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Appl. 1 ∕ f noise in Ga N ∕ Al Ga N heterostructure field-effect transistors in high magnetic fields at 300 K